參數(shù)資料
型號(hào)： BUK9620-100A
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： TrenchMOS logic level FET
中文描述： 63 A, 100 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁(yè)數(shù)： 2/15頁(yè)
文件大?。?/td> 321K
代理商： BUK9620-100A
Philips Semiconductors
BUK9520-100A; BUK9620-100A
TrenchMOS logic level FET
Product specification
Rev. 01 — 7 February 2001
2 of 15
9397 750 07915
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
Typ
17
Max
100
63
200
175
20
22
Unit
V
A
W
°
C
m
m
T
mb
= 25
°
C; V
GS
= 5 V
T
mb
= 25
°
C
T
j
= 25
°
C; V
GS
= 5 V; I
D
= 25 A
T
j
= 25
°
C; V
GS
= 4.5 V; I
D
= 25 A
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
V
GSM
non-repetitive gate-source voltage
I
D
drain current (DC)
Limiting values
Conditions
Min
Max
100
100
±
10
±
15
63
Unit
V
V
V
V
A
R
GS
= 20 k
t
p
≤
50
μ
s
T
mb
= 25
°
C; V
GS
= 5 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 5 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
45
253
A
A
I
DM
peak drain current
P
tot
T
stg
T
j
Source-drain diode
I
DR
reverse drain current (DC)
I
DRM
pulsed reverse drain current
Avalanche ruggedness
W
DSS
non-repetitive avalanche energy
total power dissipation
storage temperature
operating junction temperature
55
55
200
+175
+175
W
°
C
°
C
T
mb
= 25
°
C
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
63
253
A
A
unclamped inductive load; I
D
= 63 A;
V
DS
≤
100 V; V
GS
= 5 V; R
GS
= 50
;
starting T
mb
= 25
°
C
420
mJ
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