參數(shù)資料
型號： BUK7609-75A
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 75A I(D) | TO-263AB
中文描述： 晶體管| MOSFET的| N溝道| 75V的五（巴西）直| 75A條（?。﹟對263AB
文件頁數(shù)： 2/15頁
文件大小： 336K
代理商： BUK7609-75A
Philips Semiconductors
BUK75/76/7E04-40A
TrenchMOS standard level FET
Product data
Rev. 02 — 7 November 2001
2 of 15
9397 750 09059
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
[1]
[2]
Current is limited by power dissipation chip rating
Continuous current is limited by package
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
Typ
Max
40
198
300
175
Unit
V
A
W
°
C
T
mb
= 25
°
C; V
GS
= 10 V
T
mb
= 25
°
C
[1]
V
GS
= 10 V; I
D
= 25 A
T
j
= 25
°
C
T
j
= 175
°
C
3.9
4.5
8.5
m
m
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
Min
Max
40
40
±
20
198
75
75
794
Unit
V
V
V
A
A
A
A
R
GS
= 20 k
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
[1]
[2]
[2]
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
DM
peak drain current
P
tot
T
stg
T
j
Source-drain diode
I
DR
reverse drain current (DC)
total power dissipation
storage temperature
operating junction temperature
55
55
300
+175
+175
W
°
C
°
C
T
mb
= 25
°
C
[1]
[2]
198
75
794
A
A
A
I
DRM
Avalanche ruggedness
W
DSS
non-repetitive avalanche energy
peak reverse drain current
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
unclamped inductive load; I
D
= 75 A;
V
DS
≤
40 V; V
GS
= 10 V; R
GS
= 50
;
starting T
mb
= 25
°
C
1.6
J
相關(guān)PDF資料
PDF描述
BUK7623-75A TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 53A I(D) | TO-263AB
BUK762R7-30B TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-263AB
BUK763R1-40B TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-263AB
BUK7510-30 TrenchMOS transistor Standard level FET
BUK7514-30 TrenchMOS transistor Standard level FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK7609-75A /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7609-75A,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7610-100B 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) D2PAK T/R
BUK7610-100B /T3 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7610-100B,118 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*