- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385200 > BUK7226-75A (NXP SEMICONDUCTORS) N-channel TrenchMOS standard level FET PDF資料下載
參數(shù)資料
| 型號： | BUK7226-75A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | 45 A, 75 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大?。?/td> | 193K |
| 代理商： | BUK7226-75A |
1.
Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features
175
°
C rated
Q101 compliant
1.3 Applications
12 V, 24 V and 42 V loads
General purpose power switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
[1]
Capped at 45 A due to bondwire.
BUK7226-75A
N-channel TrenchMOS standard level FET
Rev. 02 — 22 February 2008
Product data sheet
Low on-state resistance
Standard level compatible
Automotive systems
Motors, lamps and solenoids
Quick reference
Parameter
drain-source voltage
drain current
Conditions
T
j
≥
25
°
C; T
j
≤
175
°
C
V
GS
= 10 V; T
mb
= 25
°
C;
see
Figure 1
and
4
T
mb
= 25
°
C; see
Figure 2
Min
-
Typ
-
-
Max
75
45
Unit
V
A
[1]
-
P
tot
T
j
Static characteristics
R
DSon
drain-source on-state
resistance
total power dissipation
junction temperature
-
-55
-
-
158
175
W
°
C
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25
°
C; see
Figure 12
and
13
-
22
26
m
Ω
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
I
D
= 45 A; V
sup
≤
75 V;
R
GS
= 50
Ω
; V
GS
= 10 V;
T
j(init)
= 25
°
C; unclamped
inductive load
-
-
215
mJ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK7227-100B | N-channel TrenchMOS standard level FET |
| BUK7230-55A | N-channel TrenchMOS standard level FET |
| BUK7240-100A | N-channel TrenchMOS standard level FET |
| BUK724R5-30C | N-channel TrenchMOS standard level FET |
| BUK725R0-40C | N-channel TrenchMOS standard level FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK7226-75A /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7226-75A,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7226-75A/C1,118 | 功能描述:MOSFET Trans MOSFET N-CH 75V 45A 3-Pin(2+Tab) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7227-100B | 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 100V 48A 3-Pin(2+Tab) DPAK T/R |
| BUK7227-100B /T3 | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。