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參數(shù)資料
| 型號： | BUK724R5-30C |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | N溝道TrenchMOS標(biāo)準(zhǔn)電平場效應(yīng)管 |
| 封裝： | BUK724R5-30C<SOT428 (DPAK)|<<http://www.nxp.com/packages/SOT428.html<1<,; |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 378K |
| 代理商： | BUK724R5-30C |
BUK724R5-30C
N-channel TrenchMOS standard level FET
Rev. 01 — 1 July 2010
Product data sheet
1.
Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
AEC Q101 compliant
Avalanche robust
Suitable for standard level gate drive
Suitable for thermally demanding
environment up to 175°C rating
1.3 Applications
12V Motor, lamp and solenoid loads
High performance automotive power
systems
High performance Pulse Width
Modulation (PWM) applications
1.4 Quick reference data
Table 1.
Symbol
V
DS
Quick reference data
Parameter
drain-source
voltage
drain current
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
Min
-
Typ
-
Max
30
Unit
V
I
D
V
GS
= 10 V; T
j
= 25 °C;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
-
-
75
A
P
tot
total power
dissipation
-
-
157
W
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 12
;
see
Figure 13
-
3.8
4.5
m
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 75 A; V
sup
≤
30 V;
R
GS
= 50
; V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
329
mJ
Dynamic characteristics
Q
GD
gate-drain charge
V
GS
= 10 V; I
D
= 25 A;
V
DS
= 24 V; T
j
= 25 °C;
see
Figure 14
-
21
-
nC
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| BUK724R5-30C,118 | 功能描述:MOSFET 30V N-CH Automotive TrenchMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK725R0-40C | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS standard level FET |
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| BUK7275-100A | 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 100V 21.7A 3-Pin(2+Tab) DPAK |
| BUK7275-100A /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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