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參數(shù)資料
| 型號(hào)： | BUK566-60A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Logic level FET |
| 中文描述： | 50 A, 60 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 56K |
| 代理商： | BUK566-60A |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK566-60A
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
Tmb / C
100
120
140
160
180
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-05
1E-03
t / s
1E-01
1E+01
Zth j-mb / (K/W)
10
1
0.1
0.01
0.001
0
0.5
0.2
0.1
0.05
0.02
BUKx56-lv
D =
D =
t
p
t
p
T
T
P
D
t
0
20
40
60
80
Tmb / C
100
120
140
160
180
ID / IDmax %
Normalised Current Derating
120
100
80
60
40
20
0
0
2
4
6
8
10
12
VDS / V
ID / A
10
BUK5y6-60A
150
100
50
0
2.5
3
3.5
4
4.5
5
6
7
8
VGS / V =
1
100
VDS / V
ID / A
1000
100
10
1
BUK556-60A
10
tp = 10 us
100 us
1 ms
10 ms
100 ms
RDS(ON)=VDSID
DC
0
20
40
60
80
100
120
140
ID / A
RDS(ON) / Ohm
BUK5y6-60A
0.1
0.08
0.06
0.04
0.02
0
6
3
3.5
4
4.5
5
7
VGS / V = 10
February 1996
3
Rev 1.000
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|---|---|
| BUK566-60H | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK573-48C | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Clamped logic level FET |
| BUK573-60A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK573-60B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK574-60H | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
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