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參數(shù)資料
| 型號(hào)： | BUK565-200A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Logic level FET |
| 中文描述： | 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 74K |
| 代理商： | BUK565-200A |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK565-200A
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
I
DSS
Zero gate voltage drain current
I
DSS
Zero gate voltage drain current
I
GSS
Gate source leakage current
R
DS(ON)
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
200
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
; I
= 1 mA
V
DS
= 200 V; V
GS
= 0 V; T
j
= 25 C
V
DS
= 200 V; V
GS
= 0 V; T
j
=125 C
V
GS
=
±
10 V; V
= 0 V
V
GS
= 5 V; I
D
= 7 A
1.0
-
-
-
-
1.5
1
0.1
10
0.2
2.0
10
1.0
100
0.23
V
μ
A
mA
nA
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 7 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
8.0
-
-
-
-
-
-
-
-
TYP.
15
1600
180
55
25
45
140
40
2.5
MAX.
-
2000
250
80
40
75
180
55
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; I
D
= 3 A;
V
GS
= 5 V; R
GS
= 50
;
R
gen
= 50
Measured from upper edge of drain
tab to centre of die
Measured from source lead
soldering point to source bond pad
L
s
Internal source inductance
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
-
MIN.
-
TYP.
-
MAX.
14
UNIT
A
-
I
F
= 14 A ; V
GS
= 0 V
I
F
= 14 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 30 V
-
-
-
-
-
56
1.5
-
-
A
V
ns
μ
C
1.0
200
0.25
AVALANCHE LIMITING VALUE
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
W
DSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 14 A ; V
DD
≤
100 V ;
V
GS
= 5 V ; R
GS
= 50
MIN.
-
TYP.
-
MAX.
100
UNIT
mJ
February 1996
2
Rev 1.000
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| BUK566-60H | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
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