參數(shù)資料
型號(hào): BUK553-48C
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor Voltage clamped logic level FET
中文描述: 21 A, 30 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 69K
代理商: BUK553-48C
Philips Semiconductors
Product specification
PowerMOS transistor
Voltage clamped logic level FET
BUK553-48C
CLAMPED ENERGY LIMITING VALUE
SYMBOL
W
DSRS
PARAMETER
Non-repetitive drain-source
clamped inductive turn off
energy
Drain-source repetitive clamped T
j
= 150C prior to clamping;
inductive turn off energy
CONDITIONS
T
j
= 25C prior to clamping;
I
D
= 10 A; V
< 16 V; V
= 5 V;
R
G
= 10 k
; inductive load
MIN.
-
MAX.
200
UNIT
mJ
W
DSRR
-
50
mJ
I
D
= 10 A; V
< 16 V; V
= 5 V;
R
G
= 10 k
; inductive load
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.3. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
5 V
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
0
20
40
60
80
Tmb / C
100
120
140
160
180
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
Tmb / C
100
120
140
160
180
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1
100
VDS / V
ID / A
100
10
1
BUK553-48C
10
DC
RDSON =VDSID
100 us
1 ms
10 ms
100 ms
10 us
tp =
Self-clamped
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
Zth j-mb / (K/W)
1E+01
1E+00
1E-01
1E-02
0
0.5
0.2
0.1
0.05
0.02
D =
tp
t
p
T
T
P
D
t
ZTHX53
August 1994
3
Rev 1.000
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