參數(shù)資料
型號： BUK553-60A
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistor Logic level FET
中文描述： 21 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 1/7頁
文件大?。?/td> 54K
代理商： BUK553-60A
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK553-60A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
logic level field-effect power
transistor in a plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in automotive and general purpose
switching applications.
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
BUK553
-60A
60
21
75
175
0.085
-60B
60
20
75
175
0.10
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
V
A
W
C
V
GS
= 5 V
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
±
V
GSM
Non-repetitive gate-source voltage t
p
≤
50
μ
s
CONDITIONS
-
R
GS
= 20 k
-
MIN.
-
-
-
-
MAX.
60
60
15
20
UNIT
V
V
V
V
-60A
21
15
84
-60B
20
14
80
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
-
-
-
-
-
A
A
A
W
C
C
75
175
175
- 55
-
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
2.0
UNIT
K/W
R
th j-a
-
60
-
K/W
1 2 3
tab
d
g
s
April 1993
1
Rev 1.100
相關(guān)PDF資料
PDF描述
BUK553-60B POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86%
BUK554-200A POWERLINE: RP20-S_DEW - 4:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 84%
BUK554-200B RP20 (F) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 5V; 2:1 Wide Input Voltage Range; 20 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x25.4x10.2mm Package; Efficiency to 89%
BUK554-60H PowerMOS transistor Logic level FET
BUK555-100 PowerMOS transistor Logic level FET
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參數(shù)描述
BUK55360B 制造商:PHI 功能描述:PHILIOS S1I2H
BUK553-60B 制造商:PHI 功能描述:PHILIOS S1I2H 制造商:NXP Semiconductors 功能描述: 制造商:NXP Semiconductors 功能描述:20 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
BUK554-200A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET
BUK554-200B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET
BUK554-60H 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET
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