參數(shù)資料
型號: BUK553-100B
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor Logic level FET
中文描述: 12 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁數(shù): 3/7頁
文件大?。?/td> 56K
代理商: BUK553-100B
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK553-100A/B
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
5 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
Tmb / C
100
120
140
160
180
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
Zth j-mb / (K/W)
1E+01
1E+00
1E-01
1E-02
0
0.5
0.2
0.1
0.05
0.02
D =
tp
t
p
T
T
P
D
t
ZTHX53
0
20
40
60
80
Tmb / C
100
120
140
160
180
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
BUK553-100A
5
VDS / V
24
20
16
12
8
4
0
2
3
4
7
10
ID / A
VGS / V =
1
100
VDS / V
ID / A
100
10
1
0.1
DC
BUK553-100
10
tp = 10 us
100 us
1 ms
10 ms
100 ms
RDSON =VDSID
A
B
0
4
8
12
16
20
24
28
BUK553-100A
ID / A
0.5
0.4
0.3
0.2
0.1
0
2.5
3
3.5
4
4.5
5
10
RDS(ON) / Ohm
VGS / V =
April 1993
3
Rev 1.100
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