參數(shù)資料
型號: BUK543-60B
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor Logic level FET
中文描述: 12 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 5/8頁
文件大?。?/td> 56K
代理商: BUK543-60B
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK543-60A/B
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 20 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Normalised avalanche energy rating.
W
DSS
% = f(T
hs
); conditions: I
D
= 20 A
Fig.16. Avalanche energy test circuit.
W
DSS
=
0.5
LI
D
0
0.4
0.8
1.2
1.6
2
2.4
VGS / V
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
2 %
typ
98 %
0
1
2
BUK553-50A
VSDS / V
50
40
30
20
10
0
IF / A
Tj / C = 150
25
0
20
40
VDS / V
C / pF
Ciss
Coss
Crss
10
100
1000
10000
BUK5y3-50
20
40
60
80
Ths / C
100
120
140
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0
2
4
6
8
10
12
14
16
18
20
QG / nC
VGS / V
12
10
8
6
4
2
0
VDS / V = 12
48
BUK553-60
L
T.U.T.
VDD
RGS
R 01
shunt
VDS
-ID/100
+
-
VGS
0
2
BV
DSS
/(
BV
DSS
V
DD
)
April 1993
5
Rev 1.100
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