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參數(shù)資料
| 型號： | BUK473-60B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Isolated version of BUK453-60A/B |
| 中文描述： | 12 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 57K |
| 代理商： | BUK473-60B |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK473-60A/B
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.17. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
1
2
3
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max.
19
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
1.3
November 1996
6
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK473-60A | PowerMOS transistor Isolated version of BUK453-60A/B |
| BUK474-200A | PowerMOS transistor Isolated version of BUK454-200A/B(BUK454-200A/B隔離版本的功率MOS場效應(yīng)管) |
| BUK474-200B | PowerMOS transistor Isolated version of BUK454-200A/B(BUK454-200A/B隔離版本的功率MOS場效應(yīng)管) |
| BUK474-60H | PowerMOS transistor |
| BUK475-100A | PowerMOS transistor Isolated version of BUK455-200A/B(BUK454-200A/B隔離版本的功率MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK474-200A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK454-200A/B |
| BUK474-200B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK454-200A/B |
| BUK474-60H | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK475-100A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK455-100A/B |
| BUK475-100B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK455-100A/B |
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