參數(shù)資料
型號: BUK466-60A
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor
中文描述: 52 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 5/7頁
文件大小: 57K
代理商: BUK466-60A
Philips Semiconductors
Product specification
PowerMOS transistor
BUK466-60A
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 52 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
0
20
40
QG / nC
VGS / V
12
10
8
6
4
2
0
VDS / V =10
40
BUK456-50
0
1
2
BUK456-50A
VSDS / V
IF / A
100
50
0
25 C
150 C
February 1996
5
Rev 1.000
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