參數(shù)資料
型號(hào): BUK465-60H
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor
中文描述: 45 A, 60 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù): 4/7頁(yè)
文件大小: 74K
代理商: BUK465-60H
Philips Semiconductors
Product specification
PowerMOS transistor
BUK465-60H
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 10 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 20 A; V
GS
= 5 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
2
4
6
8
10
12
0
20
40
60
80
100
BUK4Y5-60H
VGS / V
ID / A
Tj / C =
-40
150
-60
-20
20
60
Tj / C
100
140
180
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
0
20
40
60
80
100
0
5
10
15
20
25
30
BUK4Y5-60H
ID / A
gfs / S
Tj / C =
-40
25
150
0
1
2
VGS / V
3
4
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
-60
-20
20
60
100
140
180
Tj / C
Normalised RDS(ON) = f(Tj)
2.0
1.5
1.0
0.5
0
a
0.1
1
10
100
100
1000
10000
BUK4Y5-60H
VDS / V
C / pF
Ciss
Coss
Crss
August 1995
4
Rev 1.000
相關(guān)PDF資料
PDF描述
BUK466-100A PowerMOS transistor
BUK466-200A PowerMOS transistor
BUK466-60A PowerMOS transistor
BUK472-60A PowerMOS transistor Isolated version of BUK452-60A/B
BUK472-60B PowerMOS transistor Isolated version of BUK452-60A/B
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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BUK466-200A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor
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BUK472-100A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK452-100A/B