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參數(shù)資料
| 型號： | BUK456-200B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 17 A, 200 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 63K |
| 代理商： | BUK456-200B |
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK456-200A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
BUK456
-200A
200
19
150
175
0.16
-200B
200
17
150
175
0.2
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
A
W
C
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
CONDITIONS
-
R
GS
= 20 k
-
MIN.
-
-
-
MAX.
200
200
30
UNIT
V
V
V
-200A
19
13
76
-200B
17
12
68
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
-
-
-
-
-
A
A
A
W
C
C
150
175
175
- 55
-
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
1.0
UNIT
K/W
R
th j-a
-
60
-
K/W
1 2 3
tab
d
g
s
April 1993
1
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK456-200 | PowerMOS transistor |
| BUK456-200A | PowerMOS transistor |
| BUK456-60A | PowerMOS transistor |
| BUK456-60B | Aluminum Electrolytic Capacitor; Voltage Rating:25VDC; Capacitance:1uF; Capacitance Tolerance:+/- 20%; Series:94SL; Termination:Radial Leaded; Working Voltage, DC:25V; Size:.157 x .268 RoHS Compliant: Yes |
| BUK456-60H | PowerMOS transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK456-200B/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR TO 220 MOSFET N KANAL |
| BUK456-50A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK456-50B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK45660A | 制造商:NXP Semiconductors 功能描述: |
| BUK456-60A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
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