參數(shù)資料
型號: BUK202-50X
廠商: NXP SEMICONDUCTORS
元件分類: 外設及接口
英文描述: PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關)
中文描述: 20 A BUF OR INV BASED PRPHL DRVR, PSFM5
封裝: PLASTIC, TO-220, SOT-263-01, 5 PIN
文件頁數(shù): 9/13頁
文件大小: 121K
代理商: BUK202-50X
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
BUK202-50X
Fig.22. Typical status clamping voltage, V
SG
= f(T
j
).
conditions I
S
= 100
μ
A, V
BG
= 13 V
Fig.23. Low load current detection threshold.
I
L(OC)
= f(T
j
); conditions V
IG
= 5 V; V
BG
= 13 V
Fig.24. Supply typical undervoltage thresholds.
V
BG(TO)
= f(T
j
); conditions V
IG
= 3 V; I
L
= 100 mA
Fig.25. Supply typical overvoltage thresholds.
V
BG(LP)
= f(T
j
); conditions V
IG
= 5 V; I
L
= 100 mA
Fig.26. Typical battery to ground clamping voltage.
V
BG
= f(T
j
); parameter I
G
Fig.27. Typical negative load clamping characteristic.
I
L
= f(V
LG
); conditions V
IG
= 0 V, t
p
= 300
μ
s, 25 C
-60
-20
20
60
Tj / C
100
140
180
VSG / V
BUK202-50X
8.0
7.5
7.0
6.5
-60
-20
20
60
Tj / C
100
140
180
VBG(LP) / V
BUK202-50X
46
45
44
43
42
on
off
-60
-20
20
60
Tj / C
100
140
180
IL(OC) / A
BUK202-50X
1.0
0.8
0.6
0.4
0.2
0
typ.
max.
min.
-60
-20
20
60
Tj / C
100
140
180
VBG / V
BUK202-50X
65
60
55
50
10 uA
1 mA
IG =
-60
-20
20
60
Tj / C
100
140
180
VBG(TO) / V
BUK202-50X
5
4
3
2
1
0
on
off
-24
-20
-16
-12
-8
-4
0
VLG / V
IL / A
BUK202-50X
50
40
30
20
10
0
April 1995
9
Rev 1.100
相關PDF資料
PDF描述
BUK202-50Y PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關)
BUK203-50X PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關)
BUK203-50Y CONNECTOR ACCESSORY
BUK204-50X TOPFET high side switch SMD version of BUK200-50X(BUK200-50X的SMD版本TOPFET高邊開關)
BUK204-50Y TOPFET high side switch SMD version of BUK200-50X(BUK200-50X的SMD版本TOPFET高邊開關)
相關代理商/技術參數(shù)
參數(shù)描述
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