參數(shù)資料
型號(hào): BUK202-50X
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 外設(shè)及接口
英文描述: PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開(kāi)關(guān))
中文描述: 20 A BUF OR INV BASED PRPHL DRVR, PSFM5
封裝: PLASTIC, TO-220, SOT-263-01, 5 PIN
文件頁(yè)數(shù): 6/13頁(yè)
文件大?。?/td> 121K
代理商: BUK202-50X
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
BUK202-50X
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
Fig.5. Normalised limiting power dissipation.
P
D
% = 100
P
D
/P
D
(25 C) = f(T
mb
)
Fig.6. Limiting continuous on-state load current.
I
L
= f(T
mb
); conditions: V
IG
= 5 V, V
BG
= 13 V
Fig.7. Typical on-state characteristics, T
j
= 25 C.
I
L
= f(V
BL
); parameter V
BG
; t
p
= 250
μ
s
Fig.8. Typical on-state resistance, T
= 25 C.
R
ON
= f(V
BG
); conditions: I
L
= 10 A; t
p
= 300
μ
s
Fig.9. Typical on-state resistance, t
= 300
μ
s.
R
ON
= f(T
j
); parameter V
BG
; condition I
L
= 2 A
L
I
S
TOPFET
HSS
B
G
IB
IG
II
IS
IL
VBG
VIG
VSG
RS
VLG
L
VBL
0
0.2
0.4
0.6
0.8
1
VBL / V
IL / A
BUK202-50X
40
35
30
25
20
15
10
5
0
VBG / V =
13
5
6
7
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1
10
100
VBG / V
RON / mOhm
BUK202-50X
50
40
30
20
10
0
0
20
40
60
80
100
120
140
Tmb / C
IL / A
BUK202-50X
20
10
0
-60
-20
20
60
Tj / C
100
140
180
RON / mOhm
BUK202-50X
80
70
60
50
40
30
20
10
0
5 V
13 V
VBG =
typ.
April 1995
6
Rev 1.100
相關(guān)PDF資料
PDF描述
BUK202-50Y PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開(kāi)關(guān))
BUK203-50X PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開(kāi)關(guān))
BUK203-50Y CONNECTOR ACCESSORY
BUK204-50X TOPFET high side switch SMD version of BUK200-50X(BUK200-50X的SMD版本TOPFET高邊開(kāi)關(guān))
BUK204-50Y TOPFET high side switch SMD version of BUK200-50X(BUK200-50X的SMD版本TOPFET高邊開(kāi)關(guān))
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參數(shù)描述
BUK202-50Y 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch
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