參數(shù)資料
型號(hào)： BUK201-50Y
廠商： NXP SEMICONDUCTORS
元件分類： 外設(shè)及接口
英文描述： PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開(kāi)關(guān))
中文描述： 15 A BUF OR INV BASED PRPHL DRVR, PSFM5
封裝： PLASTIC, TO-220, SOT-263-01, SEP-5
文件頁(yè)數(shù)： 2/13頁(yè)
文件大小： 123K
代理商： BUK201-50Y
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
BUK201-50Y
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Battery voltages
Continuous off-state supply voltage
V
BG
-
0
50
V
Reverse battery voltages
1
Repetitive peak supply voltage
Continuous reverse supply voltage
External resistors:
R
I
= R
S
≥
4.7 k
,
δ
≤
0.1
R
I
= R
S
≥
4.7 k
-V
BG
-V
BG
-
-
32
16
V
V
I
L
P
D
T
stg
T
j
Continuous load current
Total power dissipation
Storage temperature
Continuous junction temperature
2
T
mb
≤
115 C
T
mb
≤
25 C
-
-
-
-
15
83.3
175
150
A
W
C
C
-55
-
T
sold
Lead temperature
during soldering
-
250
C
Input and status
Continuous input current
Continuous status current
I
I
I
S
-
-
-5
-5
5
5
mA
mA
I
I
I
S
Repetitive peak input current
Repetitive peak status current
δ
≤
0.1
δ
≤
0.1
-20
-20
20
20
mA
mA
Inductive load clamping
E
BL
Non-repetitive clamping energy
T
mb
= 150 C prior to turn-off
-
1.2
J
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
voltage
Human body model;
C = 250 pF; R = 1.5 k
-
2
kV
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance
3
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
R
th j-a
Junction to mounting base
-
-
1.2
1.5
K/W
Junction to ambient
in free air
-
60
75
K/W
1
Reverse battery voltage is allowed only with external input and status resistors to limit the currents to a safe value.
2
For normal continuous operation. A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates
to protect the switch.
3
Of the output Power MOS transistor.
July 1996
2
Rev 1.000
相關(guān)PDF資料
PDF描述
BUK202-50X PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開(kāi)關(guān))
BUK202-50Y PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開(kāi)關(guān))
BUK203-50X PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開(kāi)關(guān))
BUK203-50Y CONNECTOR ACCESSORY
BUK204-50X TOPFET high side switch SMD version of BUK200-50X(BUK200-50X的SMD版本TOPFET高邊開(kāi)關(guān))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK202-50 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch
BUK202-50X 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch
BUK202-50Y 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch
BUK202-50Y,127 功能描述:電源開(kāi)關(guān) IC - 配電 TOPFET HIGH SIDE SW RoHS:否 制造商:Exar 輸出端數(shù)量:1 開(kāi)啟電阻（最大值）:85 mOhms 開(kāi)啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
BUK203-50X 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch
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