- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369562 > BUK200-50Y (NXP SEMICONDUCTORS) PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān)) PDF資料下載
參數(shù)資料
| 型號(hào)： | BUK200-50Y |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān)) |
| 中文描述： | 10 A BUF OR INV BASED PRPHL DRVR, PSFM5 |
| 封裝： | PLASTIC, TO-220, SOT-263-01, SEP-5 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 126K |
| 代理商： | BUK200-50Y |
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
BUK200-50Y
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
Fig.5. Normalised limiting power dissipation.
P
D
% = 100
P
D
/P
D
(25 C) = f(T
mb
)
Fig.6. Limiting continuous on-state load current.
I
L
= f(T
mb
); conditions: V
IG
= 5 V, V
BG
= 13 V
Fig.7. Typical on-state characteristics, T
j
= 25 C.
I
L
= f(V
BL
); parameter V
BG
; t
p
= 250
μ
s
Fig.8. Typical on-state resistance, T
= 25 C.
R
ON
= f(V
BG
); conditions: I
L
= 5 A; t
p
= 300
μ
s
Fig.9. Typical on-state resistance, t
= 300
μ
s.
R
ON
= f(T
j
); parameter V
BG
; condition I
L
= 1 A
L
I
S
TOPFET
HSS
B
G
IB
IG
II
IS
IL
VBG
VIG
VSG
RS
VLG
L
VBL
0
1
2
VBL / V
IL / A
BUK200-50Y
20
15
10
5
0
0.5
1.5
VBG / V =
13
5
6
7
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1
10
100
VBG / V
RON / mO
BUK200-50Y
150
100
50
0
0
20
40
60
80
100
120
140
Tmb / C
IL / A
BUK200-50Y
15
10
5
0
-60
-20
20
60
Tj / C
100
140
180
RON / mOhm
BUK200-50Y
200
150
100
50
0
VBG =
5 V
13 V
typ.
April 1995
6
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK201-50X | PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān)) |
| BUK201-50Y | PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān)) |
| BUK202-50X | PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān)) |
| BUK202-50Y | PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān)) |
| BUK203-50X | PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK201-50X | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch |
| BUK201-50Y | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch |
| BUK202-50 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch |
| BUK202-50X | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch |
| BUK202-50Y | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。