參數(shù)資料
型號: BUK200-50Y
廠商: NXP SEMICONDUCTORS
元件分類: 外設(shè)及接口
英文描述: PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān))
中文描述: 10 A BUF OR INV BASED PRPHL DRVR, PSFM5
封裝: PLASTIC, TO-220, SOT-263-01, SEP-5
文件頁數(shù): 10/13頁
文件大?。?/td> 126K
代理商: BUK200-50Y
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
BUK200-50Y
Fig.28. Typical negative load clamping voltage.
V
LG
= f(T
j
); parameter I
L
; condition V
IG
= 0 V.
Fig.29. Typical battery to load clamping voltage.
V
BL
= f(T
j
); parameter I
L
; condition I
G
= 5 mA.
Fig.30. Typical reverse battery characteristic.
I
G
= f(V
BG
); conditions I
L
= 0 A, T
j
= 25 C
Fig.31. Typical reverse diode characteristic.
I
L
= f(V
BL
); conditions V
IG
= 0 V, T
j
= 25 C
Fig.32. Typical output capacitance. T
mb
= 25 C
C
bl
= f(V
BL
); conditions f = 1 MHz, V
IG
= 0 V
Fig.33. Typical overload characteristic, T
= 25 C.
I
L
= f(V
BL
); condition V
BG
= 13 V; parameter t
p
-60
-20
20
60
Tj / C
100
140
180
VLG / V
BUK200-50Y
-22
-20
-18
-16
-14
-12
-10
5 A
1 mA
IL =
tp = 300 us
-1.1
-0.9
-0.7
-0.5
-0.3
-0.1
VBL / V
IL / A
BUK200-50Y
0
-5
-10
-15
-20
-60
-20
20
60
Tj / C
100
140
180
VBL / V
BUK200-50Y
65
60
55
50
100 uA
1 mA
2.5 A
IL =
tp = 300 us
0
20
40
VBL / V
Cbl / pF
BUK200-50Y
1000
100
10
30
50
-20
-10
0
VBG / V
IG / mA
BUK200-50Y
0
-50
-100
-150
-15
-5
0
2
4
6
8
10
12
14
16
18
20
VBL / V
IL / A
BUK200-50Y
50
40
30
20
10
0
tp =
300 us
VBL(TO) typ.
current limiting
i.e. before short
circuit load trip
50 us
April 1995
10
Rev 1.000
相關(guān)PDF資料
PDF描述
BUK201-50X PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān))
BUK201-50Y PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān))
BUK202-50X PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān))
BUK202-50Y PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān))
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