參數(shù)資料
型號: BUK127-50DL
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 700MA I(D) | SOT-223
中文描述: 晶體管| MOSFET的| N溝道| 50V五(巴西)直| 700mA的一(d)|的SOT - 223
文件頁數(shù): 10/11頁
文件大?。?/td> 60K
代理商: BUK127-50DL
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK127-50DL
MOUNTING INSTRUCTIONS
Dimensions in mm.
Fig.21. Soldering pattern for surface mounting.
PRINTED CIRCUIT BOARD
Dimensions in mm.
Fig.22. PCB for thermal resistance and power rating.
PCB: FR4 epoxy glass (1.6 mm thick),
copper laminate (35
μ
m thick).
36
60
9
10
4.6
18
4.5
7
15
50
3.8
min
6.3
2.3
4.6
1.5
min
1.5
min
1.5
min
(3x)
October 2001
10
Rev 1.011
相關(guān)PDF資料
PDF描述
BUK130-50DL Logic level TOPFET SMD version of BUK119-50DL
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK127-50DL T/R 功能描述:MOSFET TAPE-7 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK127-50DL,115 功能描述:MOSFET TAPE-7 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK127-50GT 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET
BUK127-50GT T/R 功能描述:MOSFET TAPE-7 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK127-50GT,115 功能描述:MOSFET TAPE-7 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube