參數(shù)資料
型號(hào)： BUK114-50S
廠商： NXP SEMICONDUCTORS
元件分類： 外設(shè)及接口
英文描述： Logic level TOPFET SMD version of BUK104-50L/S
中文描述： BUF OR INV BASED PRPHL DRVR
文件頁(yè)數(shù)： 3/13頁(yè)
文件大?。?/td> 144K
代理商： BUK114-50S
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK104-50L/S
BUK114-50L/S
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
I
DRRM
Repetitive peak clamping drain current R
IS
≥
100
1
E
DSM
Non-repetitive inductive turn-off
I
DM
= 15 A; R
IS
≥
100
energy
2
E
DRM
Repetitive inductive turn-off energy
R
IS
≥
100
; T
mb
≤
95 C;
I
= 4 A; V
DD
≤
20 V;
f = 250 Hz
I
DIRM
Repetitive peak drain to input current
3
R
IS
= 0
; t
p
≤
1 ms
MIN.
-
-
MAX.
15
200
UNIT
A
mJ
-
20
mJ
-
50
mA
REVERSE DIODE LIMITING VALUE
SYMBOL
I
S
PARAMETER
Continuous forward current
CONDITIONS
T
mb
= 25 C;
V
IS
= V
PS
= V
FS
= 0 V
MIN.
-
MAX.
15
UNIT
A
THERMAL CHARACTERISTIC
SYMBOL
PARAMETER
Thermal resistance
Junction to mounting base
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
-
-
2.5
3.1
K/W
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(CL)DSR
Drain-source clamping voltage
V
(CL)DSR
Drain-source clamping voltage
CONDITIONS
R
IS
= 100
; I
D
= 10 mA
R
IS
= 100
; I
DM
= 1 A; t
p
≤
300
μ
s;
δ
≤
0.01
MIN.
50
50
TYP.
-
-
MAX.
65
70
UNIT
V
V
I
DSS
I
DSR
I
DSR
Zero input voltage drain current V
DS
= 12 V; V
IS
= 0 V
Drain source leakage current
Drain source leakage current
-
-
0.5
1
10
20
μ
A
μ
A
V
DS
= 50 V; R
IS
= 100
;
V
DS
= 40 V; R
IS
= 100
;
T
j
= 125 C
V
IS
= 7 V
V
IS
= 5 V
-
-
-
10
75
95
100
100
125
μ
A
m
m
R
DS(ON)
Drain-source on-state
resistance
I
DM
= 7.5 A;
t
p
≤
300
μ
s;
δ
≤
0.01
1
The input pin must be connected to the source pin by a specified external resistance to allow the power MOSFET gate source voltage to
become sufficiently positive for active clamping. Refer to INPUT CHARACTERISTICS.
2
While the protection supply voltage is connected, during overvoltage clamping it is possible that the overload protection may operate at
energies close to the limiting value. Refer to OVERLOAD PROTECTION CHARACTERISTICS.
3
Shorting the input to source with low resistance inhibits the internal overvoltage protection by preventing the power MOSFET gate source
voltage becoming positive.
September 1996
3
Rev 1.000
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK116-50L 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level TOPFET SMD version of BUK106-50L/S
BUK116-50L,118 功能描述:TOPFET LOGIC LVL 50V D2PAK RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān) 系列:TOPFET™ 標(biāo)準(zhǔn)包裝:1,000 系列:- 類型:高端/低端驅(qū)動(dòng)器 輸入類型:SPI 輸出數(shù):8 導(dǎo)通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:PG-DSO-20-45 包裝:帶卷 (TR)
BUK116-50L/S 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level TOPFET SMD version of BUK106-50L/S
BUK116-50S 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level TOPFET SMD version of BUK106-50L/S
BUK117-50DL 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET
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