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參數(shù)資料
| 型號(hào)： | BUK109-50GL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Logic level TOPFET(功率MOS場(chǎng)效應(yīng)管邏輯電平TOPFET) |
| 中文描述： | 26 A, 50 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK, 3 PIN |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 109K |
| 代理商： | BUK109-50GL |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK109-50GL
Fig.14. Typical overload protection characteristics.
Conditions: V
DD
= 13 V; V
IS
= 5 V; SC load = 30 m
Fig.15. Typical clamping characteristics, 25 C.
I
D
= f(V
DS
); conditions: V
IS
= 0 V; t
p
≤
50
μ
s
Fig.16. Input threshold voltage.
V
IS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= 5 V
Fig.17. Typical DC input characteristics.
I
I
= f(V
IS
); normal operation; parameter: T
j
Fig.18. Typical DC input characteristics, T
j
= 25 C.
I
ISL
= f(V
IS
); overload protection operated
I
D
= 0 A
Fig.19. Typical reverse diode current, T
j
= 25 C.
I
S
= f(V
SDS
); conditions: V
IS
= 0 V
-60
-20
20
60
100
140
180
220
Tmb / C
BUK109-50GL
1
0.5
0
Energy / J
Time / ms
Tj(TO)
Energy & Time
0
2
4
6
8
10
VIS / V
II / uA
BUK109-50GL
500
400
300
200
100
0
150 C
Tj = 25 C
50
60
70
VIS / V
ID / A
BUK109-50GL
30
20
10
0
typ.
0
2
4
6
8
VIS / V
IISL / mA
BUK109-50GL
3
2
1
0
RESET
PROTECTION LATCHED
NORMAL
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VIS(TO) / V
2
1
0
max.
typ.
min.
0
1
2
VSD / V
IS / A
BUK109-50GL
100
50
0
June 1996
7
Rev 1.000
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|---|---|
| BUK109-50GS | PowerMOS transistor TOPFET(功率MOS晶體管TOPFET) |
| BUK111-50GL | Logic level TOPFET SMD version of BUK112-50GL |
| BUK112-50GL | N-Channel Enhancement MOSFET |
| BUK113-50DL | N-Channel Enhancement MOSFET |
| BUK114-50L | Logic level TOPFET SMD version of BUK104-50L/S |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK109-50GS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PowerMOS transistor TOPFET |
| BUK110-50DL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK110-50GL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK110-50GL /T3 | 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK110-50GL,118 | 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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