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參數(shù)資料
| 型號： | BUK109-50GL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Logic level TOPFET(功率MOS場效應管邏輯電平TOPFET) |
| 中文描述： | 26 A, 50 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK, 3 PIN |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 109K |
| 代理商： | BUK109-50GL |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK109-50GL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Continuous off-state drain source
voltage
Continuous input voltage
Continuous drain current
Continuous drain current
Repetitive peak on-state drain current
Total power dissipation
Storage temperature
Continuous junction temperature
1
V
IS
= 0 V
-
50
V
V
IS
I
D
I
D
I
DRM
P
D
T
stg
T
j
T
sold
-
0
-
-
-
-
6
V
A
A
A
W
C
C
T
mb
≤
25 C; V
IS
= 5 V
T
mb
≤
100 C; V
IS
= 5 V
T
mb
≤
25 C; V
IS
= 5 V
T
mb
≤
25 C
-
normal operation
26
16
100
75
150
150
-55
-
Lead temperature
during soldering
-
250
C
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
ISP
Protection supply voltage
2
for valid protection
4
-
V
Over temperature protection
V
DDP(T)
Protected drain source supply voltage
V
IS
= 5 V
-
50
V
Short circuit load protection
Protected drain source supply voltage
3
V
IS
= 5 V
Instantaneous overload dissipation
V
DDP(P)
P
DSM
-
-
35
1.3
V
T
mb
= 25 C
kW
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
DROM
E
DSM
Repetitive peak clamping current
Non-repetitive clamping energy
V
IS
= 0 V
T
mb
≤
25 C; I
DM
= 26 A;
V
DD
≤
20 V; inductive load
T
mb
≤
95 C; I
DM
= 8 A;
V
DD
≤
20 V; f = 250 Hz
-
-
26
625
A
mJ
E
DRM
Repetitive clamping energy
-
40
mJ
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
voltage
Human body model;
C = 250 pF; R = 1.5 k
-
2
kV
1
A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates to protect the switch.
2
The input voltage for which the overload protection circuits are functional.
3
The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed V
DDP(P)
maximum.
For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
June 1996
2
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| BUK109-50GS | PowerMOS transistor TOPFET(功率MOS晶體管TOPFET) |
| BUK111-50GL | Logic level TOPFET SMD version of BUK112-50GL |
| BUK112-50GL | N-Channel Enhancement MOSFET |
| BUK113-50DL | N-Channel Enhancement MOSFET |
| BUK114-50L | Logic level TOPFET SMD version of BUK104-50L/S |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BUK109-50GS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PowerMOS transistor TOPFET |
| BUK110-50DL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK110-50GL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK110-50GL /T3 | 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK110-50GL,118 | 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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