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參數(shù)資料
| 型號： | BUK101-50 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | PowerMOS transistor Logic level TOPFET |
| 中文描述： | PowerMOS晶體管邏輯電平TOPFET |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 89K |
| 代理商： | BUK101-50 |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK101-50DL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
V
IS
I
D
I
D
I
DRM
P
D
T
stg
T
j
T
sold
Continuous drain source voltage
1
Continuous input voltage
Continuous drain current
Continuous drain current
Repetitive peak on-state drain current
Total power dissipation
Storage temperature
Continuous junction temperature
2
-
-
-
0
-
-
-
-
50
6
26
16
100
75
150
150
V
V
A
A
A
W
C
C
T
mb
≤
25 C; V
IS
= 5 V
T
mb
≤
100 C; V
IS
= 5 V
T
mb
≤
25 C; V
IS
= 5 V
T
mb
≤
25 C
-
normal operation
-55
-
Lead temperature
during soldering
-
250
C
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
ISP
Protection supply voltage
3
for valid protection
4
-
V
Over temperature protection
V
DDP(T)
Protected drain source supply voltage
V
IS
= 5 V
-
50
V
Short circuit load protection
4
Protected drain source supply voltage
5
V
IS
= 5 V
Instantaneous overload dissipation
V
DDP(P)
P
DSM
-
-
20
1.3
V
T
mb
= 25 C
kW
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
DROM
E
DSM
Repetitive peak clamping current
Non-repetitive clamping energy
V
IS
= 0 V
T
mb
≤
25 C; I
DM
= 26 A;
V
DD
≤
20 V; inductive load
T
mb
≤
95 C; I
DM
= 8 A;
V
DD
≤
20 V; f = 250 Hz
-
-
26
625
A
mJ
E
DRM
Repetitive clamping energy
-
40
mJ
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
voltage
Human body model;
C = 250 pF; R = 1.5 k
-
2
kV
1
Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2
A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates to protect the switch.
3
The input voltage for which the overload protection circuits are functional.
4
For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
5
The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for
P
DSM
, which is always the case when V
DS
is less than V
DDP(P)
maximum.
April 1993
2
Rev 1.100
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BUK101-50DL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK101-50GL | 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK101-50GL,127 | 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK101-50GL/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR TO 220 TOPFET 5POLIG |
| BUK101-50GS | 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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