參數(shù)資料
型號： BUJD203AD
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： NPN power transistor with integrated diode
中文描述： 4 A, 425 V, NPN, Si, POWER TRANSISTOR, TO-252
封裝： PLASTIC, SC-63, DPAK-3
文件頁數(shù)： 1/15頁
文件大?。?/td> 214K
代理商： BUJD203AD
1.
Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic
package.
1.2 Features and benefits
Fast switching
High voltage capability
Integrated anti-parallel E-C diode
Surface-mountable package
Very low switching and conduction
losses
1.3 Applications
DC-to-DC converters
Electronic lighting ballasts
Inverters
Motor control systems
1.4 Quick reference data
Table 1.
Symbol
I
C
BUJD203AD
NPN power transistor with integrated diode
Rev. 01 — 27 September 2010
Product data sheet
Quick reference data
Parameter
collector current
Conditions
see
Figure 1
; see
Figure 2
; DC;
see
Figure 4
see
Figure 3
; T
mb
≤
25 °C
Min
-
Typ
-
Max
4
Unit
A
P
tot
total power
dissipation
collector-emitter
peak voltage
-
-
80
W
V
CESM
V
BE
= 0 V
-
-
850
V
Static characteristics
h
FE
DC current gain
I
C
= 500 mA; V
CE
= 5 V;
see
Figure 12
; T
mb
= 25 °C
V
CE
= 5 V; I
C
= 3 A; T
mb
= 25 °C;
see
Figure 12
I
B
= 0 A; L
C
= 25 mH; I
C
= 10 mA;
see
Figure 7
; see
Figure 8
13
21
32
-
12.5
-
V
CEOsus
collector-emitter
sustaining voltage
400
450
-
V
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參數(shù)描述
BUJD203AD,118 功能描述:兩極晶體管 - BJT NPN 425 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUJD203AX 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 4A 850V TO220F 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 850V, TO220F 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 850V, TO220F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:425V; Power Dissipation Pd:26W; DC Collector Current:4A; DC Current Gain hFE:21; No. of Pins:3 ;RoHS Compliant: Yes
BUJD203AX,127 功能描述:兩極晶體管 - BJT NPN 425 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BU-JSB3100L 制造商:Fuji Electric 功能描述:
BUK 9575-100A 制造商:NXP Semiconductors 功能描述:Bulk
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