參數(shù)資料
型號(hào)： BUJ304AX
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： Silicon Diffused Power Transistor
中文描述： 6 A, 500 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, FULL PACK-3
文件頁(yè)數(shù)： 1/7頁(yè)
文件大小： 71K
代理商： BUJ304AX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ304AX
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
h
FEsat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
0.3
11
25
MAX.
1000
1000
500
6
10
32
1.0
15
50
UNIT
V
V
V
A
A
W
V
T
hs
≤
25 C
I
C
= 4.0 A;I
B
= 0.8 A
I
C
= 4.0 A; V
CE
= 5 V
I
C
= 5.0 A; I
B1
= 1A
Fall time (Inductive)
ns
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector to emitter voltage
V
CEO
Collector to emitter voltage (open base)
V
CBO
Collector to base voltage (open emitter)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1000
500
1000
6
10
3
6
32
150
150
UNIT
V
V
V
A
A
A
A
W
C
C
T
hs
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
With heatsink compound
in free air
TYP.
-
55
MAX.
3.95
-
UNIT
K/W
K/W
1 2 3
case
b
c
e
March 1999
1
Rev 1.000
相關(guān)PDF資料
PDF描述
BUJ304A Silicon Diffused Power Transistor
BUK106-50L PowerMOS transistor Logic level TOPFET
BUK106-50LP PowerMOS transistor Logic level TOPFET
BUK106-50S PowerMOS transistor Logic level TOPFET
BUK127-50GT PowerMOS transistor Logic level TOPFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUJ403 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
BUJ403A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
BUJ403A,127 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 550V 6A 3-Pin(3+Tab) RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUJ403A/DG,127 功能描述:MOSFET NPN POWER TRANSISTOR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUJ403A127 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*