參數(shù)資料
型號： BUJ304A
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： Silicon Diffused Power Transistor
中文描述： 6 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁數(shù)： 1/7頁
文件大?。?/td> 70K
代理商： BUJ304A
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ304A
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
h
FESAT
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
0.3
11
25
MAX.
1000
1000
500
6
10
100
1.0
15
50
UNIT
V
V
V
A
A
W
V
T
mb
≤
25 C
I
C
B
= 0.8 A
I
C
= 4.0 A; V
CE
= 5 V
I
C
= 5.0 A; I
B1
= 1.0 A
Fall time (Inductive)
ns
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector to emitter voltage
V
CEO
Collector to emitter voltage (open base)
V
CBO
Collector to base voltage (open emitter)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1000
500
1000
6
10
3
6
100
150
150
UNIT
V
V
V
A
A
A
A
W
C
C
T
mb
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
TYP.
-
60
MAX.
1.25
-
UNIT
K/W
K/W
in free air
1 2 3
tab
b
c
e
March 1999
1
Rev 1.000
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