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參數(shù)資料
| 型號： | BUH515D |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High Voltage Fast-Switching NPN Power Transistor(高電壓快速開關(guān)NPN功率晶體管) |
| 中文描述： | 高壓快速NPN電源開關(guān)晶體管（高電壓快速開關(guān)npn型功率晶體管） |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 84K |
| 代理商： | BUH515D |
Switching Time Resistive Load
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
I
B1
has to be provided for the lowest gain h
FE
at
100
negative base current I
B2
must be provided to
turn off the power transistor (retracephase). Most
of the dissipation, especially in the deflection
application, occurs at switch-off. Therefore it is
essential to determine the value of I
B2
which
minimizes
power
losses,
consequently,T
j
. A new set of curves have been
defined to give total power losses, t
s
and t
f
as a
function of I
B2
at 16 KHz
choosing the optimum negative drive. The test
circuit is illustrated in fig.1.
o
C (line scan phase). On the other hand,
fall
time
t
f
and,
frequencies for
Inductance L
1
serves to control the slope of the
negative base current I
B2
to recombine the
excess carrier in the collector when base current
is still present, this avoid any tailing phenomenon
in the collector current.
The values of L and C are calculated from the
following equations:
1
2L
(
I
C
)
2
=
1
1
√
L
C
Where I
C
= operating collector current, V
CEfly
=
flyback voltage, f= frequency of oscillation during
retrace.
2C
(
V
CEfly
)
2
ω =
2
π
f
=
BASE DRIVE INFORMATION
BUH515D
4/7
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUH515FP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 8A I(C) | TO-220FP |
| BUH517 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN ISOWATT-218 |
| BUH517 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN ISOWATT-218 |
| BUH517D | 制造商:STMicroelectronics 功能描述:1700V 8A 60W Bce St Micro Transistor NPN |
| BUH51G | 功能描述:兩極晶體管 - BJT 3A 800V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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