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參數(shù)資料
| 型號： | BUF744 |
| 英文描述： | Silicon NPN High Voltage Switching Transistor |
| 中文描述： | 硅npn型高壓開關(guān)晶體管 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 133K |
| 代理商： | BUF744 |
BUF744
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
6 (9)
t
s
–I
B2
/ I
B1
94 9215
0
1
2
3
4
0
2
4
6
8
10
saturated switching
R-load
I
C
= 1.5A, I
B1
= 0.3A
T
j
= 125
°
C
T
j
= 25
°
C
Figure 10. t
s
vs. –I
B2
/I
B1
t
s
–I
B2
/ I
B1
94 9211
0
1
2
3
4
0
2
4
6
8
10
saturated switching
R-load
I
C
= 3A, I
B1
= 0.6A
T
j
= 125
°
C
T
j
= 25
°
C
Figure 11. t
s
vs. –I
B2
/I
B1
t
s
–I
B2
/ I
B1
94 9213
0
1
2
3
4
0
2
4
6
8
10
unsaturated (Baker clamp)
R-load
I
C
= 3A, I
B1
= 0.6A
T
j
= 125
°
C
T
j
= 25
°
C
Figure 12. t
s
vs. –I
B2
/I
B1
t
f
–I
B2
/ I
B1
94 9216
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1.0
saturated switching
R-load
I
C
= 1.5A, I
B1
= 0.3A
T
j
= 125
°
C
T
j
= 25
°
C
Figure 13. t
f
vs. –I
B2
/I
B1
t
f
–I
B2
/ I
B1
94 9214
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1.0
saturated switching
R-load
I
C
= 3A, I
B1
= 0.6A
T
j
= 25
°
C
T
j
= 125
°
C
Figure 14. t
f
vs. –I
B2
/I
B1
t
f
–I
B2
/ I
B1
94 9212
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1.0
unsaturated (Baker clamp)
R-load
I
C
= 3A, I
B1
= 0.6A
T
j
= 125
°
C
T
j
= 25
°
C
Figure 15. t
f
vs. –I
B2
/I
B1
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