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參數(shù)資料
| 型號(hào)： | BUF744 |
| 英文描述： | Silicon NPN High Voltage Switching Transistor |
| 中文描述： | 硅npn型高壓開關(guān)晶體管 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 133K |
| 代理商： | BUF744 |
BUF744
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
5 (9)
Typical Characteristics
(T
case
= 25 C unless otherwise specified)
0
100
200
300
400
0
2
4
6
8
I
C
V
CE
– Collector Emitter Voltage ( V )
600
95 10558
500
V
CESat
< 2V
0.1 x I
C
< I
B2
< 0.5 x I
C
Figure 4. V
CEW
– Diagram
I
V
CE
- Collector Emitter Voltage (V)
94 9207
0
2
4
6
8
10
10
8
6
4
2
0
C
T
j
= 25
°
C
I
B
= 50mA
200mA
400mA
600mA
800mA
1A
1.4A
Figure 5. I
C
vs. V
CE
h
I
C
- Collector Current (A)
94 9209
F
0.01
0.1
1
10
100
10
1
V
CE
= 2V
V
CE
= 10V
V
CE
= 5V
Figure 6. h
FE
vs. I
C
0.01
0.10
1.00
10.00
100.00
0
25
50
75
100
125
150
T
case
– Case Temperature (
°
C )
13716
P
t
12.5K/W
25K/W
50K/W
R
thJA
=85K/W
2.5K/W
Figure 7. P
tot
vs.T
case
V
I
B
- Base Current (A)
94 9208
0.01
0.1
1
10
10
1
0.1
0.01
C
I
C
= 0.75A
1.25A
5A
4A
3A
2A
Figure 8. V
CEsat
vs. I
B
h
I
C
- Collector Current (A)
94 9210
F
0.01
0.1
1
10
100
10
1
V
CE
= 2V
T
j
= 125
°
C
T
j
= 25
°
C
T
j
= –25
°
C
Figure 9. h
FE
vs. I
C
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