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參數(shù)資料
| 型號： | BUF601AU |
| 英文描述： | HIGH-SPEED BUFFER AMPLIFIER |
| 中文描述： | 高速緩沖放大器 |
| 文件頁數(shù)： | 4/14頁 |
| 文件大?。?/td> | 247K |
| 代理商： | BUF601AU |
4
BUF600, 601
INPUT PROTECTION
Static damage has been well recognized for MOSFET de-
vices, but any semiconductor device deserves protection
from this potentially damaging source. The BUF600 and
BUF601 incorporate on-chip ESD protection diodes as shown
in Figure 1. This eliminates the need for the user to add
external protection diodes, which can add capacitance and
degrade AC performance.
FIGURE 1. Internal ESD Protection.
+V
CC
–V
CC
External
Pin
Internal
Circuitry
ESD Protection Diodes
internally connected to
all pins.
All input pins on the BUF600 and BUF601 are internally
protected from ESD by means of a pair of back-to-back
reverse-biased diodes to the power supplies as shown. These
diodes will begin to conduct when the input voltage exceeds
either power supply by about 0.7V. This situation can occur
with loss of the amplifier’s power supplies while a signal
source is still present. The diodes can typically withstand a
continuous current of 30mA without destruction. To insure
long term reliability, however, the diode current should be
externally limited to 10mA or so whenever possible.
The internal protection diodes are designed to withstand
2.5kV (using the Human Body Model) and will provide
adequate ESD protection for most normal handling proce-
dures. However, static damage can cause subtle changes in
amplifier input characteristics without necessarily destroy-
ing the device. In precision amplifiers, this may cause a
noticeable degradation of offset and drift. Therefore, static
protection is strongly recommended when handling the
BUF600 and BUF601.
TYPICAL PERFORMANCE CURVES
At V
CC
=
±
5V, R
LOAD
= 10k
, and T
A
= 25
°
C, unless otherwise noted.
INPUT BIAS CURRENT vs TEMPERATURE
–40
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
Temperature (°C)
B
–20
0
20
40
60
80
100
BUF600
BUF601
OFFSET VOLTAGE vs TEMPERATURE
–40
5
4
3
2
1
0
–1
–2
–3
–4
–5
Temperature (°C)
O
–20
0
20
40
60
80
100
BUF600
BUF601
INPUT IMPEDANCE vs FREQUENCY BUF601
100
10M
1M
100k
10k
1k
Frequency (Hz)
I
)
1k
10k
100k
1M
10M
100M
INPUT IMPEDANCE vs FREQUENCY BUF600
100
10M
1M
100k
10k
1k
Frequency (Hz)
I
)
1k
10k
100k
1M
10M
100M
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUF602 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:High-Speed, Closed-Loop Buffer |
| BUF602ID | 功能描述:高速運算放大器 High Speed Closed Loop Buffer RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| BUF602ID | 制造商:Texas Instruments 功能描述:IC OP-AMP BUFFER 1GHZ SGL 8SOIC 制造商:Texas Instruments 功能描述:IC, OP-AMP BUFFER 1GHZ SGL 8SOIC 制造商:Texas Instruments 功能描述:IC, OP-AMP BUFFER 1GHZ SGL 8SOIC; No. of Amplifiers:2; Gain Bandwidth:1000MHz; Slew Rate:8000V/s; Supply Voltage Range: 1.4V to 6.3V; Amplifier Case Style:SOIC; No. of Pins:8; Output Current:60mA; Amplifier Output:Single Ended; ;RoHS Compliant: Yes |
| BUF602IDBVR | 功能描述:高速運算放大器 High Speed Closed Loop Buffer RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| BUF602IDBVRG4 | 功能描述:高速運算放大器 Hi Speed Closed Loop Buffer RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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