參數(shù)資料
型號: BUF16820
英文描述: 14-Channel GAMMA VOLTAGE GENERATOR with Programmable VCOM Outputs and OTP Memory
中文描述: 14通道伽瑪電壓發(fā)生器具有可編程威科姆輸出和OTP存儲器
文件頁數(shù): 4/30頁
文件大?。?/td> 681K
代理商: BUF16820
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SBOS356A FEBRUARY 2006 REVISED OCTOBER 2006
www.ti.com
4
TYPICAL CHARACTERISTICS
At TA = +25
°
C, V
S
= 18V, V
SD
= 5V, V
REFH
= 17V, V
REFL
= 1V, RL = 1.5k
connected to ground, and CL = 200pF, unless otherwise noted.
Figure 1
20
18
16
14
12
10
8
6
4
2
0
A
Q
(
ANALOG SUPPLY CURRENT vs TEMPERATURE
40
20
0
100
40
60
80
20
Temperature ( C)
V
S
= 18V
V
S
= 10V
Figure 2
30
25
20
15
10
5
0
D
Q
(
μ
A
DIGITAL SUPPLY CURRENT vs TEMPERATURE
40
20
0
100
40
60
80
20
Temperature ( C)
V
S
= 3.3V
V
S
= 5V
Figure 3
O
FULLSCALE OUTPUT SWING
Time (1
μ
s/div)
REFH = 17V
Code 3FF
000
Code 000
3FF
Figure 4
18
17
16
15
3
2
1
0
O
OUTPUT VOLTAGE vs OUTPUT CURRENT
0
10
20
100
40
50
60
70
80
90
30
Output Current (mA)
OUT19, V
COM
12 (sinking)
Code = 000h
V
REFL
= 1V, V
REFH
= 17.8V
R
LOAD
Connected to 18V
OUT1014 (sourcing), Code = 3FFh
V
REFL
= 0.2V, V
REFH
= 17V
R
LOAD
Connected to GND
OUT1014 (sinking), Code = 000h
V
REFL
= 0.2V, V
REFH
= 17V
R
LOAD
Connected to 18V
OUT19, V
COM
12 (sourcing)
Code = 3FFh
V
REFL
= 1V, V
REFH
= 17.8V
R
LOAD
Connected to GND
Figure 5
0.6
0.4
0.2
0
0.2
0.4
0.6
I
INTEGRAL NONLINEARITY ERROR vs INPUT CODE
0
200
1000
400
600
800
Input Code
Figure 6
0.6
0.4
0.2
0
0.2
0.4
0.6
D
DIFFERENTIAL NONLINEARITY ERROR vs INPUT CODE
0
200
1000
400
600
800
Input Code
相關(guān)PDF資料
PDF描述
BUF16820AIDAPR 14-Channel GAMMA VOLTAGE GENERATOR with Programmable VCOM Outputs and OTP Memory
BUF16820AIDAPRG4 14-Channel GAMMA VOLTAGE GENERATOR with Programmable VCOM Outputs and OTP Memory
BUF20800 18-Channel GAMMA VOLTAGE GENERATOR with Two Programmable VCOM Channels
BUF20800AIDCPR 18-Channel GAMMA VOLTAGE GENERATOR with Two Programmable VCOM Channels
BUF20820 18-Channel GAMMA VOLTAGE GENERATOR with Two Programmable VCOM Channels
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BUF16821A 制造商:TI 制造商全稱:Texas Instruments 功能描述:Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory