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參數(shù)資料
| 型號： | BUD600-SMD |
| 英文描述： | Silicon NPN Hugh Voltage Switching Transistor |
| 中文描述： | 硅npn型休電壓開關晶體管 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 167K |
| 代理商： | BUD600-SMD |
BUD600
TELEFUNKEN Semiconductors
Rev. B2, 18-Jul-97
2 (9)
Maximum Thermal Resistance
T
case
= 25
°
C, unless otherwise specified
Parameter
Junction case
Test Conditions
Symbol
R
thJC
Value
7.5
Unit
K/W
Electrical Characteristics
T
case
= 25
°
C, unless otherwise specified
Parameter
Test Conditions
Symbol
I
CES
I
CES
V
(BR)CEO
Min
Typ
Max
50
0.5
Unit
A
mA
V
Collector cut-off current
V
CES
= 600 V
V
CES
= 600 V; T
case
= 150 C
I
C
= 300 mA; L = 125 mH;
I
measure
= 100 mA
I
E
= 1 mA
I
C
= 0.3 A; I
B
= 0.1 A
I
C
= 1 A; I
B
= 0.3 A
I
C
= 0.3 A; I
B
= 0.1 A
I
C
= 1 A; I
B
= 0.3 A
V
CE
= 2 V; I
C
= 10 mA
V
CE
= 2 V; I
C
= 0.3 A
V
CE
= 2 V; I
C
= 1 A
V
CE
= 5 V; I
C
= 2 A
V
S
= 50 V; L = 1 mH; I
C
= 2 A;
I
B1
= 0.7 A; –I
B2
= 0.2 A;
–V
BB
= 5 V
I
C
= 1 A; I
B
= 0.2 A, t = 1 s
I
C
= 1 A; I
B
= 0.2 A, t = 3 s
I
C
= 200 mA; V
CE
= 10 V;
f = 1 MHz
Collector-emitter breakdown
voltage (figure 1)
Emitter-base breakdown voltage
Collector-emitter saturation
voltage
Base-emitter saturation voltage
250
V
(BR)EBO
V
CEsat
V
CEsat
V
BEsat
V
BEsat
h
FE
h
FE
h
FE
h
FE
V
CEW
11
V
V
V
V
V
0.1
0.25
0.9
1
22
20
9
6
0.2
0.4
1
1.2
DC forward current transfer ratio
15
15
7
4
300
Collector-emitter working voltage
V
Dynamic saturation voltage
V
CEsatdyn
V
CEsatdyn
f
T
4
6
V
V
0.8
1.5
Gain bandwidth product
4
MHz
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| BUD616A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN High Voltage Switching Transistor |
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| BUD620 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 4A I(C) | TO-251 |
| BUD620SMD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 4A I(C) | TO-251 |
| BUD630 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 6A I(C) | TO-251 |
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