參數(shù)資料
型號(hào): BU508AX
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 8 A, 700 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SOT-399, 3 PIN
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 63K
代理商: BU508AX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AX
Fig.7. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.8. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.9. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
B
); parameter I
C
Fig.10. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.11. Normalised power dissipation.
PD% = 100
P
D
/P
D 25C
= f (T
hs
)
BU508AD
0.1
1
10
0
0.2
0.4
0.6
0.8
1
IC / A
VCESAT / V
0.1
0.3
0.5
0.7
0.9
1.0E-05
1E-03
1.0E-01
1.0E+1
0.1.0E-07
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
bu508ax
t / s
Zth K/W
D =
t
p
t
p
T
T
P
D
t
0
1
2
3
4
0.6
0.8
1
1.2
1.4
IC = 6A
IC = 4.5A
IC = 3A
IB / A
VBESAT / V
BU508AD
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
BU508AD
0.1
1
10
0.1
1
10
IC = 4.5A
IC = 6A
IC = 3A
VCESAT/V
IB/A
July 1998
4
Rev 1.200
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