參數(shù)資料
型號(hào)： BU508AF
廠商： 永盛國(guó)際集團(tuán)
英文描述： SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
中文描述： 擴(kuò)散硅功率晶體管（一般）的說(shuō)明
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 142K
代理商： BU508AF
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in
a plastic envelope,primarily for use in switching power
circuites of colour television receivers
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0V
MIN
-
-
-
-
-
-
MAX
1500
600
8
15
60
1.5
UNIT
V
V
A
A
W
V
A
V
T
mb
I
C
= 4.5A; I
B
= 2.0A
f = 16KHz
25
I
C
=4.5A,I
B1
=-I
B2
=1.2A,V
CC
=140V
1.0
s
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0V
MIN
-
-
-
-
-
-
-
-55
-
MAX
1500
600
8
15
4
6
60
150
150
UNIT
V
V
A
A
A
A
W
Tmb
25
SYMBOL
I
CE
I
CES
PARAMETER
Collector cut-off current
CONDITIONS
V
BE
= 0V; V
CE
= V
CESMmax
V
BE
= 0V; V
CE
= V
CESMmax
T
j
= 125
I
B
= 0A; I
C
= 100mA
L = 25mH
I
C
= 4.5A; I
B
= 2.0A
I
C
= 4.5A; I
B
= 2.0A
I
C
= 1A; V
CE
= 5V
MIN
-
-
MAX
1.0
2.0
UNIT
mA
mA
V
CEOsust
Collector-emitter sustaining voltage
-
V
V
CEsat
V
BEsat
h
FE
V
F
f
T
C
c
t
s
t
f
Collector-emitter saturation voltages
Base-emitter satuation voltage
DC current gain
Diode forward voltage
Transition frequency at f = 1MHz
Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time
-
-
8
1.5
2.5
40
V
V
V
I
C
= 0.1A; V
CE
= 10V
V
CB
= 10V
I
C
=4.5A,I
B1
=-I
B2
=1.2A,V
CC
=140V
I
C
=4.5A,I
B1
=-I
B2
=1.2A,V
CC
=140V
3
MHz
pF
135
7.0
1.0
s
s
ELECTRICAL CHARACTERISTICS
TOP-3Fa
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
BU508AF
SILICON DIFFUSED POWER TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BU508AF 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-199
BU508AF/B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR HOCHSPANNUNG BIPOLAR
BU508AF_0708 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High voltage NPN power transistor for standard definition CRT display
BU508AFI 功能描述:兩極晶體管 - BJT NPN General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BU508AFTBTU 功能描述:兩極晶體管 - BJT NPN Triple Diffused Planar Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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