參數(shù)資料
型號: BU506F
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
中文描述: 5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 6/12頁
文件大?。?/td> 83K
代理商: BU506F
1997 Aug 14
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506F; BU506DF
Fig.4 Power derating curve.
handbook, halfpage
0
50
Th (
o
C)
100
150
0
40
80
MGK674
Ptot max
(%)
Fig.5
Test circuit for collector-emitter
sustaining voltage.
handbook, halfpage
MGE252
+
50 V
100 to 200
30 to 60 Hz
L
6 V
oscilloscope
vertical
horizontal
1
300
Fig.6
Oscilloscope display for collector-emitter
sustaining voltage.
handbook, halfpage
(mA)
MGE239
250
200
100
0
min
VCEOsust
VCE (V)
Fig.7
Collector-emitter saturation voltage as a
function of base current; typical values.
T
j
= 25
°
C.
(1) I
C
= 1 A.
(2) I
C
= 2 A.
(3) I
C
= 3 A.
handbook, halfpage
10
2
10
1
10
1
1
1
VCEsat
(V)
IB (A)
10
MGB870
(1)
(2)
(3)
相關(guān)PDF資料
PDF描述
BU506DF Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
BU506 Silicon diffused power transistors
BU506D Silicon diffused power transistors
BU5071
BU508AD TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 8A I(C) | TO-218AC
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