參數(shù)資料
型號(hào): BU506F
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
中文描述: 5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220
封裝: PLASTIC PACKAGE-3
文件頁(yè)數(shù): 5/12頁(yè)
文件大?。?/td> 83K
代理商: BU506F
1997 Aug 14
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506F; BU506DF
Fig.3 Forward bias SOAR (with heatsink compound).
handbook, full pagewidth
MGB934
1
10
1
10
2
10
3
10
4
I
VCE (V)
10
10
1
10
2
10
2
10
4
10
3
IC
(A)
ICM max
IC max
II
Mounted
with
heatsink compound and 30
±
5 N force on centre of package.
T
mb
= 25
°
C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
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BU506DF Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
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