參數(shù)資料
型號(hào): BU4S81G2-TR
廠商: Rohm Semiconductor
文件頁數(shù): 5/14頁
文件大?。?/td> 0K
描述: IC GATE AND SINGLE 2INPUT 5SSOP
標(biāo)準(zhǔn)包裝: 3,000
系列: 4S
邏輯類型: 與門
電路數(shù): 1
輸入數(shù): 2
電源電壓: 3 V ~ 16 V
電流 - 靜態(tài)(最大值): 1µA
輸出電流高,低: 3.4mA,3.4mA
邏輯電平 - 低: 1.5 V ~ 4 V
邏輯電平 - 高: 3.5 V ~ 11 V
額定電壓和最大 CL 時(shí)的最大傳播延遲: 30ns @ 15V,50pF
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
供應(yīng)商設(shè)備封裝: 5-SSOP
封裝/外殼: 6-TFSOP(0.063",1.60mm 寬),5 引線
包裝: 帶卷 (TR)
2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAB1200 Rev 1.2.7
15
FAB
12
00
Ground
-Re
ferenc
ed
Class
-G
He
adp
hone
Ampli
fi
er
wi
th
I
n
tegrated
Buck
Co
nvert
er
Physical Dimensions
Figure 23. 16-Ball WLCSP, 4x4 Array, 0.4 mm Pitch, 250 m Ball
Product-Specific Dimensions
Product
D
E
X
Y
FAB1200UCX
1.56 mm
0.18 mm
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent version.
Package specifications do not expand Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent packaging drawings and tape and reel
BOTTOM VIEW
SIDE VIEWS
TOP VIEW
RECOMMENDED LAND PATTERN
BALL A1
INDEX AREA
1 2 3 4
A
B
C
D
SEATING
PLANE
16X
A1
0.005
C A B
F
(NSMD PAD TYPE)
0.260±0.02
0.40
(X) ±0.018
(Y) ±0.018
0.625
0.547
0.06 C
0.05 C
E
D
F
0.378±0.018
0.208±0.021
NOTES:
A. NO JEDEC REGISTRATION APPLIES.
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCE
PER ASME Y14.5M, 1994.
D. DATUM C IS DEFINED BY THE SPHERICAL
CROWNS OF THE BALLS.
E. PACKAGE NOMINAL HEIGHT IS 586 MICRONS
±39 MICRONS (547-625 MICRONS).
F. FOR DIMENSIONS D, E, X, AND Y SEE
PRODUCT DATASHEET.
G. DRAWING FILNAME: MKT-UC016AArev2.
0.03 C
2X
0.03 C
2X
E
D
B
C
A
0.40
(0.20)
Cu Pad
(0.30) Solder
Mask Opening
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