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參數(shù)資料
| 型號(hào)： | BU4525DF |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 12 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-199, 3 PIN |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 21K |
| 代理商： | BU4525DF |
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4525DF
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
This data sheet contains target or goal specifications for product development.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998
4
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BU4525DL | Silicon Diffused Power Transistor |
| BU4525DW | Silicon Diffused Power Transistor |
| BU4525DX | Silicon Diffused Power Transistor |
| BU4530AL | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BU4530AW | Silicon Diffused Power Transistor(硅功率擴(kuò)散晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU4525DL | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4525DW | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4525DX | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4528 | 制造商:ROHM 制造商全稱(chēng):Rohm 功能描述:Dual monostable multivibrator |
| BU4528B | 功能描述:IC MULTIVIBRATOR MONOSTBLE 16DIP RoHS:是 類(lèi)別:集成電路 (IC) >> 邏輯 - 多頻振蕩器 系列:4000B 標(biāo)準(zhǔn)包裝:1 系列:4000B 邏輯類(lèi)型:單穩(wěn)態(tài) 獨(dú)立電路:2 施密特觸發(fā)器輸入:無(wú) 傳輸延遲:100ns 輸出電流高，低:8.8mA，8.8mA 電源電壓:3 V ~ 15 V 工作溫度:-55°C ~ 125°C 安裝類(lèi)型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC 包裝:Digi-Reel® 其它名稱(chēng):CD4538BCMXDKR |
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