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參數(shù)資料
| 型號(hào)： | BU4525AX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| 中文描述： | 12 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 44K |
| 代理商： | BU4525AX |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4525AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 6.0 V; I
C
= 0 A
I
B
= 1 mA
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 9.0 A;I
B
= 2.25A
I
C
= 9.0 A;I
B
= 2.25A
I
C
= 1.0 A; V
CE
= 5 V
I
C
= 9.0 A; V
CE
= 5 V
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
BV
EBO
V
CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
-
-
100
-
-
μ
A
V
V
7.5
800
13.5
-
V
CEsat
V
BEsat
h
FE
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
3.0
1.06
-
7.6
V
V
0.88
-
4.2
0.97
12
5.8
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
C
c
Collector capacitance
Switching times (16 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
Switching times (70 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
Csat
= 9.0 A;I
B1
= 1.8 A
(I
B2
= -4.5 A)
TYP.
145
MAX.
-
UNIT
pF
3.7
0.4
4.5
0.55
μ
s
μ
s
I
Csat
= 7.0 A;I
B1
= 1.4 A
(I
B2
= -4.5 A)
2
-
-
μ
s
μ
s
0.15
2
Measured with half sine-wave voltage (curve tracer).
October 1998
2
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BU4525DF | Silicon Diffused Power Transistor |
| BU4525DL | Silicon Diffused Power Transistor |
| BU4525DW | Silicon Diffused Power Transistor |
| BU4525DX | Silicon Diffused Power Transistor |
| BU4530AL | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU4525DF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4525DL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4525DW | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4525DX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4528 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Dual monostable multivibrator |
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