參數(shù)資料
型號(hào): BU4522AF
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 10 A, 800 V, NPN, Si, POWER TRANSISTOR
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 53K
代理商: BU4522AF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4522AF
Fig.7. High and low DC current gain.
Fig.8. High and low DC current gain.
Fig.9. Typical collector-emitter saturation voltage.
Fig.10. Typical base-emitter saturation voltage.
Fig.11. Typical collector storage and fall time.
I
C
=7 A; T
j
= 85C; f = 16kHz
Fig.12. Typical collector storage and fall time.
I
C
= 6 A; T
j
= 85C; f = 64 kHz
0.01
0.1
1
10
100
1
10
100
IC / A
hFE
Ths = 25 C
Ths = 85 C
VCE = 1 V
BU4522AF/X
0
1
2
3
4
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
IB / A
VBEsat \ V
Ths = 25 C
Ths = 85 C
IC = 7 A
IC = 6 A
0.01
0.1
1
10
100
1
10
100
IC / A
h
Ths = 25 C
Ths = 85 C
VCE = 5 V
BU4522AF/X
0.5
1
1.5
2
1
2
3
4
5
IBend / A
ts/tf/ us
BU4522AF/X 16kHz
ICsat = 7 A
Ths = 85 C
Freq = 16 kHz
00
0.1
1
10
100
0.01
0.1
1
10
IC / A
VCEsat (V)
BU4522AF/X
Ths = 25 C
Ths = 85 C
IC/IB = 5
0
0.5
1
1.5
2
0
1
2
3
4
5
IB / A
ts/tf/ us
BU4522AF/X 64kHz
ICsat = 6 A
Ths = 85 C
Freq = 64 kHz
December 1997
4
Rev 1.000
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