參數(shù)資料
型號(hào): BU4508HG
廠商: NXP Semiconductors N.V.
英文描述: Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
中文描述: 擴(kuò)散硅功率晶體管(硅擴(kuò)散功率型晶體管)
文件頁數(shù): 4/12頁
文件大?。?/td> 92K
代理商: BU4508HG
June 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508AF
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
Fig.3. Switching times waveforms (16 kHz).
Fig.4. Switching times definitions.
Fig.5. Switching times test circuit
Fig.6. High and low DC current gain.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
100R
ICsat
90 %
10 %
tf
ts
IB1
IC
IB
t
t
- IB2
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
+ 150 v nominal
adjust for ICsat
Lc
Cfb
T.U.T.
LB
IBend
-VBB
IC
IB
VCE
ICsat
IB1
64us
26us
20us
t
t
t
TRANSISTOR
DIODE
IB2
1
0.01
0.1
1
10
10
100
VCE = 1V
Ths = 25 C
Ths = 85 C
hFE
IC / A
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