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參數(shù)資料
| 型號： | BU2530AW |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| 中文描述： | 16 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247 |
| 封裝： | PLASTIC, SOT-429, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 69K |
| 代理商： | BU2530AW |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2530AW
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 7.5 V; I
C
= 0 A
I
B
= 1 mA
I
C
= 9.0 A; I
B
= 1.64 A
I
C
= 9.0 A; I
B
= 1.64 A
I
C
= 1 A; V
CE
= 5 V
I
C
= 9 A; V
CE
= 5 V
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
BV
EBO
V
CEsat
V
BEsat
h
FE
h
FE
Emitter cut-off current
Base-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
1.0
-
5.0
1.0
27
10
mA
V
V
V
7.5
-
0.825
9
5.5
14
-
0.91
17
8
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (32 kHz line
deflection dynamic test circuit).
CONDITIONS
I
Csat
= 9.0 A; L
C
= 200
μ
H; C
fb
= 13 nF;
V
CC
= 138 V; I
B(end)
= 1.3 A;
-I
BM
= 4.5 A; -V
BB
= 4 V; L
B
= 1
μ
H
TYP.
MAX.
UNIT
t
s
t
f
Turn-off storage time
Turn-off fall time
3.5
0.14
4.5
0.25
μ
s
μ
s
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
IC
IB
VCE
ICsat
IBend
32us
13us
10us
t
t
t
TRANSISTOR
DIODE
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.000
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| BU2532AW | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BU2532AL | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2532AW | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN TO-247 |
| BU2532AW | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN TO-247 |
| BU2532AW/B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TRANSISTOR POWER TO-247 |
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