參數(shù)資料
型號(hào): BU2525AW
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 功率晶體管
英文描述: INDUCTOR 1UH LOW PROFILE HIGH CURRENT
中文描述: 12 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247
封裝: PLASTIC, SOT-429, 3 PIN
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 74K
代理商: BU2525AW
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525AW
Fig.9. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.10. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
B
); parameter I
C
Fig.11. Typical turn-off losses.T
= 85C
Eoff = f (I
B
); parameter I
C
; f = 32 kHz
Fig.12. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85C; f = 32 kHz
Fig.13. Normalised power dissipation.
PD% = 100
P
D
/P
D 25C
= f (T
mb
)
Fig.14. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
0
1
2
3
4
IB / A
VBESAT / V
BU2525A
1.2
1.1
1
0.9
0.8
0.7
0.6
Tj = 25 C
Tj = 125 C
IC=
8 A
6 A
5 A
4 A
0.1
1
10
IB / A
ts, tf / us
BU2525A
12
11
10
9
8
7
6
5
4
3
2
1
0
32 kHz
ts
tf
IC =
7 A
8 A
0.1
1
10
IB / A
VCESAT / V
BU2525A
10
1
0.1
Tj = 25 C
Tj = 125 C
IC = 4 A
5 A
6 A
8 A
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0.1
1
10
IB / A
Eoff / uJ
BU2525A
1000
100
10
IC = 8 A
7 A
1E-06
1E-04
1E-02
1E+00
t / s
Zth / (K/W)
BU2525A
D = 0
0.02
0.05
0.1
0.2
0.5
10
1
0.1
0.01
0.001
D =
t
p
t
p
T
T
P
D
t
September 1997
4
Rev 1.100
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參數(shù)描述
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