參數(shù)資料
型號(hào): BU2525AW
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: INDUCTOR 1UH LOW PROFILE HIGH CURRENT
中文描述: 12 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247
封裝: PLASTIC, SOT-429, 3 PIN
文件頁數(shù): 3/7頁
文件大?。?/td> 74K
代理商: BU2525AW
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525AW
Fig.3. Switching times waveforms.
Fig.4. Switching times definitions.
Fig.5. Switching times test circuit(BU2525A).
Fig.6. Typical DC current gain. h
FE
= f (I
C
)
parameter V
CE
Fig.7. Typical base-emitter saturation voltage.
V
BE
sat = f (I
C
); parameter I
C
/I
B
Fig.8. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
IC
IB
VCE
ICsat
IBend
32us
13us
10us
t
t
t
TRANSISTOR
DIODE
0.1
10
IC / A
hFE
BU2525A
100
10
1
100
1
Tj = 25 C
Tj = 125 C
5 V
1 V
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
0.1
1
10
IC / A
VBESAT / V
BU2525A
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
IC/IB=
3
4
5
+ 150 v nominal
adjust for ICsat
Lc
Cfb
T.U.T.
LB
IBend
-VBB
0.1
10
IC / A
VCESAT / V
BU2525A
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
100
1
Tj = 25 C
Tj = 125 C
IC/IB =
4
5
3
September 1997
3
Rev 1.100
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