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參數(shù)資料
| 型號： | BU2520DW |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| 中文描述： | 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247 |
| 封裝： | PLASTIC, SOT-429, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 71K |
| 代理商： | BU2520DW |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520DW
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 7.5 V; I
C
= 0 A
I
B
= 600 mA
V
= 7.5 V
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 6.0 A; I
B
= 1.2 A
I
C
= 6.0 A; I
B
= 1.2 A
I
C
= 1.0 A; V
= 5 V
I
C
= 6 A; V
CE
= 5 V
I
F
= 6 A
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
BV
EBO
R
be
V
CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
100
7.5
-
800
-
300
-
-
-
mA
V
V
13.5
50
-
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
-
5
-
-
-
5.0
1.1
-
9.5
2.2
V
V
13
7
-
Diode forward voltage
V
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
C
c
Collector capacitance
Switching times (16 kHz line
deflection circuit)
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
Csat
= 6.0 A; L
C
= 650
μ
H; C
fb
= 19 nF;
I
= 1.0 A; L
B
= 5.3
μ
H; -V
BB
= 4 V;
(-dI
B
/dt = 0.8 A /
μ
s)
TYP.
115
MAX.
-
UNIT
pF
t
s
t
f
Turn-off storage time
Turn-off fall time
4.5
0.35
5.5
0.5
μ
s
μ
s
Fig.1. Switching times waveforms (16 kHz).
Fig.2. Switching times definitions.
IC
IB
VCE
ICsat
IBend
64us
26us
20us
t
t
t
TRANSISTOR
DIODE
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
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