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參數(shù)資料
| 型號： | BTW69-1000 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | SCR |
| 中文描述： | 可控硅 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 234K |
| 代理商： | BTW69-1000 |
1/5
BTW67 and BTW69 Series
STANDARD
50A SCRs
April 2001 - Ed: 4
MAIN FEATURES:
DESCRIPTION
Available in high power packages, the BTW67 /
BTW69 Series is suitable in applications where
power handling and power dissipation are critical,
such as solid state relays, welding equipment,
high power motor control.
Based on a clip assembly technology, they offer a
superior performance in surge current handling
capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation (2500V RMS), complying
with UL standards (file ref: E81734).
Symbol
Value
Unit
I
T(RMS)
50
A
V
DRM
/V
RRM
600 to 1200
V
I
GT
80
mA
ABSOLUTE RATINGS
(limiting values)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(180° conduction angle)
RD91
Tc = 70°C
50
A
TOP3 Ins.
Tc = 75°C
I
T(AV)
Average on-state current
(180° conduction angle)
RD91
Tc = 70°C
32
A
TOP3 Ins.
Tc = 75°C
I
TSM
Non repetitive surge peak on-state current
tp = 8.3 ms
Tj = 25°C
610
A
tp = 10 ms
580
I
2
t
I
2
t Value for fusing
Tj = 25°C
1680
A
2
S
dI/dt
Critical rate of rise of on-state current I
G
=
2 x I
GT
, tr
≤
100 ns
F = 60 Hz
Tj = 125°C
50
A/μs
I
GM
Peak gate current
tp = 20 μs
Tj = 125°C
8
A
P
G(AV)
Average gate power dissipation
Tj = 125°C
1
W
T
stg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
V
RGM
Maximum peak reverse gate voltage
5
V
RD91
(BTW67)
TOP3
(BTW69)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BTW69200 | SCR |
| BTW69400 | SCR |
| BTW69600 | SCR |
| BTW69800 | SCR |
| BTW69N1000 | SCR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTW69-1000 | 制造商:STMicroelectronics 功能描述:THYRISTOR 32A 1000V TO-218 |
| BTW69-1000RG | 功能描述:SCR 50 Amp 1000 Volt RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BTW69-1200 | 制造商:STMicroelectronics 功能描述:THYRISTOR 32A 1200V TO-218 |
| BTW69-1200N | 制造商:STMicroelectronics 功能描述:THYRISTOR TRIAC - Rail/Tube 制造商:STMicroelectronics 功能描述:SCR 1200V 50A NON-INS TOP3 |
| BTW69-1200RG | 功能描述:SCR 50 Amp 1200 Volt RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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