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參數(shù)資料
| 型號(hào)： | BTW69N1000 |
| 廠(chǎng)商： | 意法半導(dǎo)體 |
| 英文描述： | SCR |
| 中文描述： | 可控硅 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 234K |
| 代理商： | BTW69N1000 |
1/5
BTW67 and BTW69 Series
STANDARD
50A SCRs
April 2001 - Ed: 4
MAIN FEATURES:
DESCRIPTION
Available in high power packages, the BTW67 /
BTW69 Series is suitable in applications where
power handling and power dissipation are critical,
such as solid state relays, welding equipment,
high power motor control.
Based on a clip assembly technology, they offer a
superior performance in surge current handling
capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation (2500V RMS), complying
with UL standards (file ref: E81734).
Symbol
Value
Unit
I
T(RMS)
50
A
V
DRM
/V
RRM
600 to 1200
V
I
GT
80
mA
ABSOLUTE RATINGS
(limiting values)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(180° conduction angle)
RD91
Tc = 70°C
50
A
TOP3 Ins.
Tc = 75°C
I
T(AV)
Average on-state current
(180° conduction angle)
RD91
Tc = 70°C
32
A
TOP3 Ins.
Tc = 75°C
I
TSM
Non repetitive surge peak on-state current
tp = 8.3 ms
Tj = 25°C
610
A
tp = 10 ms
580
I
2
t
I
2
t Value for fusing
Tj = 25°C
1680
A
2
S
dI/dt
Critical rate of rise of on-state current I
G
=
2 x I
GT
, tr
≤
100 ns
F = 60 Hz
Tj = 125°C
50
A/μs
I
GM
Peak gate current
tp = 20 μs
Tj = 125°C
8
A
P
G(AV)
Average gate power dissipation
Tj = 125°C
1
W
T
stg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
V
RGM
Maximum peak reverse gate voltage
5
V
RD91
(BTW67)
TOP3
(BTW69)
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| BTW69 | SCR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTW69N1200 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:SCR |
| BTW92-1200R | 制造商:n/a 功能描述:Power Semiconductor |
| BTX | 制造商:ALTECH 制造商全稱(chēng):Altech corporation 功能描述:30 mm Rubber Boots BTx (x=color) |
| BTX18 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:SILICON THYRISTORS |
| BTX18-100 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:SILICON THYRISTORS |
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