參數(shù)資料
型號: BTS712-N1
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: ?5.0 - 34V的。 4x200mΩ極限(可控硅)第4A示波器- 20 - 9?
文件頁數(shù): 10/15頁
文件大?。?/td> 193K
代理商: BTS712-N1
BTS 711 L1
Semiconductor Group
10
Inductive load switch-off energy
dissipation
E
bb
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
EAS
L
R
ELoad
RL
L
{
L
Z
Energy stored in load inductance:
E
L
=
1/2
·
L
·
I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
=
V
ON(CL)
·
i
L
(t) dt,
with an approximate solution for RL
>
0
:
E
AS
= I
L
·
L
2
·
R
L
(
V
bb
+
|V
OUT(CL)
|)
ln
(1+
I
L
·
R
L
|V
OUT(CL)
| )
Maximum allowable load inductance for
a single switch off
(one channel)
5)
L = f (IL );
Tj,start =
150°C, Vbb =
12
V, RL =
0
L [mH]
1000
1
10
100
1
1.5
2
2.5
3
IL [A]
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