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參數(shù)資料
| 型號： | BTS650PE3230 |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 單外設驅(qū)動 |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 236K |
| 代理商： | BTS650PE3230 |
Data Sheet BTS650P
Infineon Technologies AG
Page 5
2000-Mar-24
Parameter and Conditions
at
T
j
=
-40 ... +150
°C,
V
bb
=
12
V unless otherwise specified
Symbol
Values
typ
Unit
min
max
Protection Functions
Short circuit current limit
(Tab to pins 1,2,6,7)
16)
V
ON
=
12
V, time until shutdown max. 350
s
T
c
=-40°C:
T
c
=25°C:
T
c
=+150°C:
I
L(SC)
I
L(SC)
I
L(SC)
--
--
65
110
130
115
--
180
--
A
Short circuit shutdown delay after input current
positive slope,
V
ON
>
V
ON(SC)
min. value valid only if input "off-signal" time exceeds 30 s
Output clamp
17
)
(inductive load switch off)
see diagram Ind. and overvolt. output clamp page 8
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
(e.g. overvoltage)
I
L
= 40 mA
Short circuit shutdown detection voltage
(pin 4 to pins 1,2,6,7)
Thermal overload trip temperature
Thermal hysteresis
t
d(SC)
80
--
350
s
I
L
= 40 mA:
-
V
OUT(CL)
14
16.5
20
V
V
ON(CL)
39
42
47
V
V
ON(SC)
T
jt
T
jt
--
6
--
--
--
--
V
150
°C
K
--
10
Reverse Battery
Reverse battery voltage
18
)
On-state resistance
(Pins 1,2,6,7 to pin 4)
V
bb
=
-12V,
V
IN
=
0,
I
L
=
-
20
A,
R
IS
=
1
k
Integrated resistor in V
bb
line
-
V
bb
R
ON(rev)
--
--
--
32
7.0
12.3
V
T
j
=
25
°C:
T
j
=
150
°C:
5.4
8.9
m
R
bb
--
120
--
16
) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by
permanent resetting the short circuit latch function. The lifetime will be reduced under such condition.
17
)This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode
is used, V
is clamped to V
- V
at inductive load switch off.
18
)The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (
I
IN
=
I
IS
=
0) the power transistor
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! Increasing
reverse battery voltage capability is simply possible as described on page 9.
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參數(shù)描述 |
|---|---|
| BTS6510 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside High Current Power Switch |
| BTS6510B | 功能描述:IC SWITCH PWR HISIDE TO220-7 SMD RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 內(nèi)部開關(guān) 系列:PROFET® 標準包裝:1,000 系列:- 類型:高端/低端驅(qū)動器 輸入類型:SPI 輸出數(shù):8 導通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應商設備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
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| BTS660-P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:?9mOhm - Vbb(on) = 5V-58V - TO220-7-3? |
| BTS660P E3180A | 功能描述:IC SWITCH PWR HISIDE TO220-7 SMD RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 內(nèi)部開關(guān) 系列:PROFET® 標準包裝:1,000 系列:- 類型:高端/低端驅(qū)動器 輸入類型:SPI 輸出數(shù):8 導通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應商設備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
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